Display panel and electric apparatus including the same

ABSTRACT

Provided are a display panel and an electronic apparatus including the same. The display panel has a transmittance area and an expanded display area to enable the representation of images in an area where an electronic component is located and, for example, to remove or decrease the distortion by diffracted light among the light received by the electronic component when the electronic component is an electronic component (e.g., a camera) using light. The display panel includes: a substrate; first pixel circuits and second pixel circuits on the substrate and spaced apart from one another with the transmittance area therebetween, and each including a thin film transistor and a storage capacitor; first and second display elements electrically respectively coupled to the first and second pixel circuits; and a first phase shift layer between the substrate and the first and second pixel circuits and having a first light transmittance.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2020-0018569, filed on Feb. 14, 2020, in the KoreanIntellectual Property Office, the entire content of which is herebyincorporated by reference.

BACKGROUND 1. Field

Embodiments of the present disclosure relate to a display panel and anelectronic apparatus including the same, and, for example, to a displaypanel of which a display area is expanded to enable the representationof images in an area where an electronic component is located, and anelectronic apparatus including the display panel.

2. Description of Related Art

Recently, display apparatuses have been used in various fields. Also, asthe thickness and weight of display apparatuses have been reduced, therange of use of the display apparatuses has increased.

An increase in the occupied areas of display areas in displayapparatuses results in the addition of functions embedded onto or linkedwith the display apparatuses. To add various functions while increasingthe areas of the display areas, research has been conducted into displayapparatuses in which various components can be arranged in their displayareas.

SUMMARY

To add diverse functions to a display apparatus, an electronic componentsuch as a camera or a sensor may be in a display area of the displayapparatus. According to one or more embodiments of the disclosure, thedisclosure provides a display panel including an expanded display panelto enable the representation of images even in an area where anelectronic component is located, and an electronic apparatus includingthe display panel. However, this is merely an example, and one or moreembodiments of the disclosure are not limited thereto.

Additional aspects of embodiments will be set forth in part in thedescription which follows and, in part, will be apparent from thedescription, or may be learned by practice of the embodiments presentedin this disclosure.

According to an aspect of an embodiment of the disclosure, a displaypanel includes a transmittance area and includes: a substrate; firstpixel circuits and second pixel circuits on the substrate and spacedapart from one another, and each including a thin film transistor and astorage capacitor; first display elements electrically coupled to thefirst pixel circuits, respectively; second display elements electricallycoupled to the second pixel circuits, respectively; and a first phaseshift layer between the substrate and the first pixel circuits and thesecond pixel circuits and having a first light transmittance.

The first phase shift layer may include at least one selected from thegroup consisting of transition metals, silicon compounds, transitionmetal oxides, transition metal nitrides, transition metal oxynitrides,transition metal carbides, and transition metal oxynitride carbides.

The first light transmittance of the first phase shift layer in avisible light band may be in a range of about 3 and about 80.

A first thickness of the first phase shift layer may have a value in arange of about 1000 Å to about 3000 Å.

A first refractive index of the first phase shift layer may be in arange of about 1.5 and about 4.0, and a first extinction coefficient ofthe first phase shift layer may be in a range of about 0.01 and about2.0.

The first phase shift layer may include a first sub-phase shift layeroverlapping the first pixel circuit, and a second sub-phase shift layeroverlapping the second pixel circuit, and the first sub-phase shiftlayer and the second sub-phase shift layer may be spaced apart from eachother.

The display panel may further include a light-blocking layer on thefirst phase shift layer, wherein the light-blocking layer may have asecond light transmittance that is less than the first lighttransmittance.

An edge of the first phase shift layer may be closer to thetransmittance area than an edge of the light-blocking layer, and theedge of the first phase shift layer and the edge of the light-blockinglayer may form a step difference.

The display panel may further include a second phase shift layer on thelight-blocking layer and overlapping the light-blocking layer and thefirst phase shift layer.

An edge of the second phase shift layer may be closer to thetransmittance area than the edge of the first phase shift layer.

The display panel may further include a second phase shift layer betweenthe first phase shift layer and the light-blocking layer.

The edge of the first phase shift layer may be closer to thetransmittance area than an edge of the second phase shift layer.

The edge of the second phase shift layer may be elongated furthertowards the transmittance area than the edge of the first phase shiftlayer.

Each of the first phase shift layer and the second phase shift layer mayinclude at least one selected from the group consisting of transitionmetals, silicon compounds, transition metal oxides, transition metalnitrides, transition metal oxynitrides, transition metal carbides, andtransition metal oxynitride carbides, and a material or a compositionratio of the second phase shift layer may differ from a material or acomposition ratio of the first phase shift layer.

The display panel may further include a light-blocking band layerbetween the light-blocking layer and the transmittance area and spacedapart from the light-blocking layer.

The display panel may further include a reflection prevention layerunder the first phase shift layer, corresponding to the pixel circuit.

According to another aspect of an embodiment of the disclosure, there isprovided an electronic apparatus including: a display panel including atransmittance area; and an electronic component overlapping thetransmittance area, wherein the display panel includes: a substrate;first pixel circuits and second pixel circuits on the substrate andspaced apart from each other with the transmittance area between thefirst and second pixel circuits, and each including a thin filmtransistor and a storage capacitor; first display elements electricallyrespectively coupled to the first pixel circuits; second displayelements electrically respectively coupled to the second pixel circuits;and a first phase shift layer between the substrate and the first andsecond pixel circuits and having a first light transmittance.

The electronic apparatus may further include a light-blocking layer onthe first phase shift layer, wherein an edge of the first phase shiftlayer may be closer to the transmittance area than an edge of thelight-blocking layer, and the edge of the first phase shift layer andthe edge of the light-blocking layer may form a step difference.

The electronic apparatus may further include a second phase shift layeron the first phase shift layer.

Each of the first phase shift layer and the second phase shift layer mayinclude at least one selected from the group consisting of transitionmetals, silicon compounds, transition metal oxides, transition metalnitrides, transition metal oxynitrides, transition metal carbides, andtransition metal oxynitride carbides, and a material or a compositionratio of the second phase shift layer may differ from a material or acomposition ratio of the first phase shift layer.

Other aspects and features of embodiments other than those describedabove will become apparent from the following detailed description,claims and drawings for carrying out the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of certain embodiments of thedisclosure will be more apparent from the following description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a schematic perspective view of an electronic apparatusincluding a display panel, according to an embodiment;

FIGS. 2A and 2B are schematic cross-sectional views of a portion of theelectronic apparatus including a display panel, according to anembodiment;

FIG. 3 is an equivalent circuit diagram showing a pixel circuit coupledto an organic light-emitting diode of the display panel, according to anembodiment;

FIG. 4 is a schematic plan view of a portion of a first display area ofthe display panel, according to an embodiment;

FIG. 5 is a schematic plan view of a portion of a second display area ofthe display panel, according to an embodiment;

FIG. 6 is a schematic cross-sectional view of a portion of the displaypanel, according to an embodiment;

FIG. 7 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment;

FIG. 8 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment;

FIG. 9 is a schematic enlarged cross-sectional view of a portion of thedisplay panel of FIG. 8;

FIG. 10 is a schematic plan view of a portion of the second display areaof the display panel, according to another embodiment;

FIG. 11 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment;

FIG. 12 is a schematic plan view of a portion of the second display areaof the display panel, according to another embodiment;

FIG. 13 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment;

FIG. 14 is a schematic plan view of a portion of the second display areaof the display panel, according to another embodiment;

FIG. 15 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment;

FIG. 16 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment;

FIG. 17 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment;

FIG. 18 is a schematic plan view of a portion of the second display areaof the display panel, according to another embodiment;

FIG. 19 shows schematic graphs of amplitudes and intensities oftransmitted light according to a location of the display panel,according to an embodiment; and

FIG. 20 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment.

DETAILED DESCRIPTION

Reference will now be made in more detail to embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein likereference numerals refer to like elements throughout. In this regard,the present embodiments may have different forms and should not beconstrued as being limited to the descriptions set forth herein.Accordingly, the embodiments are merely described below, by referring tothe figures, to explain aspects of embodiments of the presentdescription. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. Throughoutthe disclosure, the expression “at least one of a, b or c” indicatesonly a, only b, only c, both a and b, both a and c, both b and c, all ofa, b, and c, or variations thereof.

The disclosure will now be described more fully with reference to theaccompanying drawings, in which embodiments of the disclosure are shown.Like reference numerals in the drawings denote like elements, and thus,duplicative description thereof will not be repeated.

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises” and/or“comprising” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, region, or component isreferred to as being “on” or “formed on” another layer, region, orcomponent, it can be directly or indirectly on or formed on the otherlayer, region, or component. That is, for example, intervening layers,regions, or components may be present.

Sizes of components in the drawings may be exaggerated for convenienceof explanation. In other words, because sizes and thicknesses ofcomponents in the drawings may be arbitrarily illustrated forconvenience of explanation, the following embodiments are not limitedthereto.

When a certain embodiment may be implemented differently, a set orspecific process order may be performed differently from the describedorder. For example, two consecutively described processes may beperformed substantially at the same time or performed in an orderopposite to the described order.

In the present specification, an expression such as “A and/or B”indicates A, B, or A and B. Also, an expression such as “at least one ofA and B” indicates A, B, or A and B.

It will be understood that when a component, such as a layer, a film, aregion, or a plate, is referred to as being “connected to” or “coupledto” another component, the component can be directly on the othercomponent or intervening components may be present thereon. For example,it will be understood that when a component, such as a layer, a film, aregion, or a plate, is referred to as being “electrically connected to”or “electrically coupled to” another component, the component can beelectrically directly on the other component or intervening componentsmay be present thereon for an indirect electrical connection.

It will be understood that when a component, such as a layer, a film, aregion, or a plate, is referred to as being “on” another component, thecomponent can be directly on the other component or interveningcomponents may be present thereon. For example, the x-axis, the y-axis,and the z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

FIG. 1 is a schematic perspective view of an electronic apparatusincluding a display panel, according to an embodiment.

Referring to FIG. 1, an electronic apparatus 1 may include a displayarea DA and a surrounding area SA outside the display area DA. Theelectronic apparatus 1 may provide images through an array of pixels Parranged in the display area DA two-dimensionally. The pixels P may bearranged in a first display area DA1 and a second display area DA2, andarrays of the pixels P arranged in the first display area DA1 and thesecond display area DA2 may differ. For example, as a transmittance areaTA (e.g., a light transmittance area) is between the pixels P arrangedin the second display area DA2, the array of the pixels P of the seconddisplay area DA2 may differ from the array of the pixels P of the firstdisplay area DA1.

The electronic apparatus 1 may provide a first image by using lightemitted from the pixels P in the first display area DA1 and a secondimage by using light emitted from the pixels P in the second displayarea DA2. In some embodiments, the first image and the second image maybe respective portions of any one of the images provided through thedisplay area DA of the electronic apparatus 1. In some embodiments, theelectronic apparatus 1 may provide the first image and the second imagethat are independent from each other.

The second display area DA2 may include the transmittance area TAlocated between the pixels P. The transmittance area TA may be an areawhere light may penetrate and where no pixels are arranged.

The surrounding area SA may be an area where no images are provided andmay surround the entire display area DA. In the surrounding area SA, adriver, etc. for providing electrical signals or power to the pixels Pmay be arranged. In the surrounding area SA, a pad may be located,wherein the pad may be an area where an electronic device, a printedcircuit board, and/or the like may be electrically coupled.

As shown in FIG. 1, a shape of the second display area DA2 may be acircle (e.g., substantially a circle) on a plane or may be an oval, butthe present disclosure is not limited thereto. For example, in someembodiments, the shape of the second display area DA2 may be a polygonsuch as a rectangle or a bar.

The second display area DA2 may be on an inner side or one side of thefirst display area DA1. As shown in FIG. 1, the entire second displayarea DA2 may be surrounded by the first display area DA1. In someembodiments, the second display area DA2 may be partially surrounded bythe first display area DA1. For example, the second display area DA2 maybe on one side of the first display area DA1 and may be partiallysurrounded by the first display area DA1.

A ratio of the second display area DA2 to the display area DA may besmaller than a ratio of the first display area DA1 to the display areaDA. As shown in FIG. 1, the electronic apparatus 1 may include thesecond display area DA2 or may include two or more second display areasDA2.

The electronic apparatus 1 may include a mobile phone, a tablet PC, alaptop, a smart watch or smart band that is a wrist-wearable gadget,and/or the like.

FIGS. 2A and 2B are schematic cross-sectional views of a portion of theelectronic apparatus including a display panel, according to anembodiment.

Referring to FIGS. 2A and 2B, the electronic apparatus 1 may include adisplay panel 10 and an electronic component 20 overlapping the displaypanel 10.

The display panel 10 may include a substrate 100, a display layer 200 onthe substrate 100, and a thin film encapsulation layer 300 on thedisplay layer 200.

The electronic component 20 may be in the second display area DA2. Theelectronic component 20 may be an electronic component using lightand/or sound. For example, the electronic component may be a sensor, forexample, a proximity sensor, which measures a distance, a sensor (e.g.,a fingerprint, a iris, a face, etc.) recognizing a body part of theuser, a small lamp outputting light, an image sensor (e.g., a camera)capturing images, and/or the like. The electronic component using lightmay use light having various suitable wavelength bands, for example,visible rays, infrared rays, ultraviolet rays, etc. The electroniccomponent using sound may use ultrasonic waves and/or sound havingdifferent wavelength bands. In some embodiments, the electroniccomponent 20 may include sub-components such as a light emitter and alight receiver. The light emitter and/or the light receiver may beintegrally formed or physically separated, and a pair of the lightemitter and the light receiver may form one electronic component 20.

The substrate 100 may include glass and/or polymer resin. For example,examples of the polymer resin of the substrate 100 may include polyethersulfone, polyacrylate, polyether imide, polyethylene naphthalate,polyethylene terephthalate, polyphenylene sulfide, polyarylate,polyimide, polycarbonate, cellulose acetate propionate, and/or the like.The substrate 100 including polymer resin may be flexible, rollable,and/or bendable. The substrate 100 may have a multilayered structureincluding a layer including the aforementioned polymer resin and aninorganic layer.

The display layer 200 may be on a front surface of the substrate 100,and a lower protection film 175 may be on a rear surface of thesubstrate 100. The lower protection film 175 may be attached to the rearsurface of the substrate 100. An adhesive layer may be between the lowerprotection film 175 and the substrate 100. In some embodiments, thelower protection film 175 may be directly formed on the rear surface ofthe substrate 100, and in this case, the adhesive layer may not bebetween the lower protection film 175 and the substrate 100.

The lower protection film 175 may support and protect the substrate 100.The lower protection film 175 may include an opening 1750P correspondingto the second display area DA2. The opening 1750P of the lowerprotection film 175 may be a concave portion formed due to a removal ofa portion of the lower protection film 175 in a thickness direction. Insome embodiments, the opening 1750P of the lower protection film 175 maybe formed as a portion of the lower protection film 175 is entirelyremoved in the thickness direction, and in this case, the opening 1750Pmay have a shape of a through hole as shown in FIGS. 2A and 2B. In someembodiments, the opening 1750P of the lower protection film 175 may havea shape of a blind hole as a portion of the lower protection film 175 ispartially removed in the thickness direction.

Due to the opening 1750P of the lower protection film 175, thetransmittance of the second display area AD2, for example, the lighttransmittance of the transmittance area TA, may be improved. The lowerprotection film 175 may include an organic insulating material such aspolyethylene terephthalate (PET) and/or polyimide (PI).

The display layer 200 may define the pixels. The pixel may be an areawhere red light, green light, or blue light may be emitted, and eachpixel may include a display element. The display element of each pixelmay include an organic light-emitting diode OLED, and the organiclight-emitting diode OLED may emit light of different colors, forexample, red, green, or blue, according to types or compositions oforganic materials included in the organic light-emitting diode OLED.

The display layer 200 may include a display element layer including theorganic light-emitting diode OLED that is a display element, a circuitlayer including a thin film transistor TFT electrically coupled to theorganic light-emitting diode OLED, and an insulating layer IL. In eachof the first display area DA1 and the second display area DA2, the thinfilm transistor TFT and the organic light-emitting diode OLEDelectrically coupled to the thin film transistor TFT may be located,respectively.

The second display area DA2 may include the transmittance area TA wherethe thin film transistor TFT and the organic light-emitting diode OLEDare not located.

The transmittance area TA may be an area where light emitted from theelectronic component 20 and/or light directed thereto may penetrate(e.g., may be transmitted). In the display panel 10, the lighttransmittance of the transmittance area TA may be equal to or greaterthan about 30%, about 40%, about 50%, about 60%, about 75%, about 80%,about 85%, or about 90%.

A phase shift layer PSL may be between the substrate 100 and the displaylayer 200, for example, the substrate 100 and the thin film transistorTFT. The phase shift layer PSL may include a through hole PSL-H throughwhich light emitted from the electronic component 20 or directed towardsthe electronic component 20 may pass. The through hole PSL-H of thephase shift layer PSL is located in the transmittance area TA. The lightpassing through the phase shift layer PSL may have a phase that isshifted 180 degrees and may destructively interfere with light passingthrough neighboring portions of the phase shift layer PSL. Therefore,light distortion, which is diffracted around edges of the phase shiftlayer PSL and incident to the electronic component 20, may not occur ormay be reduced.

Also, referring to FIG. 2B, a light-blocking layer BML may be on thephase shift layer PSL, for example, between the phase shift layer PSLand the thin film transistor TFT. The light-blocking layer BML mayinclude a through hole BML-H through which the light emitted from theelectronic component 20 or directed thereto may pass. The through holeBML-H of the light-blocking layer BML is located in the transmittancearea TA. A portion of the light-blocking layer BML, where the throughhole BML-H is not formed, may prevent or reduce diffraction of lightthrough the pixel circuit in the second display area DA2 or narrow gapsbetween lines coupled to the pixel circuit, and the performance of thethin film transistor TFT may be improved.

The display layer 200 may be sealed by an encapsulation member. In someembodiments, as shown in FIGS. 2A and 2B, the encapsulation member mayinclude the thin film encapsulation layer 300. The thin filmencapsulation layer 300 may include at least one inorganic encapsulationlayer and at least one organic encapsulation layer. In an embodiment,the thin film encapsulation layer 300 may include a first inorganicencapsulation layer 310, a second inorganic encapsulation layer 330, andan organic encapsulation layer 320 therebetween.

In the second display area DA2, one electronic component 20 or multipleelectronic components 20 may be located. When the electronic apparatus 1includes multiple electronic components 20, the electronic apparatus 1may include the second display areas DA2 of which the number correspondsto the number of electronic components 20. For example, the electronicapparatus 1 may include the second display areas DA2 that are spacedapart from each other. In some embodiments, the electronic components 20may be in one display area DA2. For example, the electronic apparatus 1may include the second display area DA2 of a bar type (e.g., bar kind),and along a lengthwise direction of the second display area DA2, theelectronic components 20 may be spaced apart from each other.

As shown in FIGS. 2A and 2B, the display panel 10 includes the organiclight-emitting diode OLED as the display element, but the display panel10 is not limited thereto. In another embodiment, the display panel 10may be an inorganic light-emitting display (or an inorganic EL display)apparatus including an inorganic material such as a micro light-emittingdiode (LED) or a quantum dot light-emitting display apparatus. Forexample, an emission layer of the display element included in thedisplay panel 10 may include an organic material, an inorganic material,quantum dots, an organic material and quantum dots, or an inorganicmaterial and quantum dots.

FIG. 3 is an equivalent circuit diagram showing a pixel circuit coupledto an organic light-emitting diode of the display panel, according to anembodiment.

Referring to FIG. 3, the display panel 10 includes a pixel circuit PCincluding thin film transistors T1 to T7 and a storage capacitor Cap.The display panel 10 may include, as an emission element, the organiclight-emitting diode OLED that emits light according to a drivingvoltage transmitted through the pixel circuit PC.

The pixel circuit PC may include the thin film transistors and thestorage capacitor. According to an embodiment, as shown in FIG. 3, thethin film transistors may include a driving thin film transistor T1, aswitching thin film transistor T2, a compensation thin film transistorT3, a first initialization thin film transistor T4, a driving controlthin film transistor T5, an emission control thin film transistor T6,and a second initialization thin film transistor T7.

A gate electrode of the driving thin film transistor T1 may be coupledto an electrode of the storage capacitor Cap, one of a source electrodeand a drain electrode of the driving thin film transistor T1 may becoupled to a driving voltage line PL via the driving control thin filmtransistor T5, and the other of the source electrode and the drainelectrode of the driving thin film transistor T1 may be electricallycoupled to a pixel electrode of the organic light-emitting diode OLEDvia the emission control thin film transistor T6. The driving thin filmtransistor T1 may provide a driving current Id to the organiclight-emitting diode OLED in response to a data signal Dm, according toa switching operation of the switching thin film transistor T2.

A gate electrode of the switching thin film transistor T2 is coupled toa first scan line SL, one of a source electrode and a drain electrode ofthe switching thin film transistor T2 is coupled to a data line DL, andthe other of the source electrode and the drain electrode of theswitching thin film transistor T2 is coupled to the driving thin filmtransistor T1 and to the driving voltage line PL via the driving controlthin film transistor T5. The switching thin film transistor T2 is turnedon in response to a scan signal Sn transmitted through the first scanline SL, and performs a switching operation of transmitting the datasignal Dm, which is transmitted to the data line DL, to the driving thinfilm transistor T1.

A gate electrode of the compensation thin film transistor T3 is coupledto the first scan line SL, one of a source electrode and a drainelectrode of the compensation thin film transistor T3 is coupled to thedriving thin film transistor T1 and to the pixel electrode of theorganic light-emitting diode OLED via the emission control thin filmtransistor T6, and the other of the source electrode and the drainelectrode of the compensation thin film transistor T3 is coupled to anelectrode of the storage capacitor Cap, the first initialization thinfilm transistor T4, and the driving thin film transistor T1. Thecompensation thin film transistor T3 is turned on in response to thescan signal Sn transmitted through the first scan line SL and isdiode-coupled ed to the driving thin film transistor T1 by beingelectrically coupled to one of the source electrode and the drainelectrode (e.g., the drain electrode) of the driving thin filmtransistor T1.

A gate electrode of the first initialization thin film transistor T4 iscoupled to a second scan line SL-1, one of a source electrode and adrain electrode of the first initialization thin film transistor T4 iscoupled to the first initialization voltage line VL-1, and the other ofthe source electrode and the drain electrode of the first initializationthin film transistor T4 is coupled to the electrode of the storagecapacitor Cap, the compensation thin film transistor T3, and the drivingthin film transistor T1. The first initialization thin film transistorT4 is turned on in response to a previous scan signal Sn−1 transmittedthrough the second scan line SL−1 and performs an initializationoperation of initializing a voltage of the gate electrode of the drivingthin film transistor T1 by transmitting an initialization voltage Vintto the gate electrode of the driving thin film transistor T1.

A gate electrode of the driving control thin film transistor T5 iscoupled to an emission control line EL, one of a source electrode and adrain electrode of the driving control thin film transistor T5 iscoupled to the driving voltage line PL, and the other of the sourceelectrode and the drain electrode of the driving control thin filmtransistor T5 is coupled to the driving thin film transistor T1 and theswitching thin film transistor T2.

A gate electrode of an emission control thin film transistor T6 iscoupled to the emission control line EL, one of a source electrode and adrain electrode of the emission control thin film transistor T6 iscoupled to the driving thin film transistor T1 and a compensation sourceelectrode S3 of the compensation thin film transistor T3, and the otherof the source electrode and the drain electrode of the emission controlthin film transistor T6 is electrically coupled to the pixel electrodeof the organic light-emitting diode OLED and the second initializationthin film transistor T7.

The driving control thin film transistor T5 and the emission controlthin film transistor T6 are concurrently (e.g., simultaneously) turnedon in response to the emission control signal En transmitted through theemission control line EL, and the driving voltage ELVDD is transmittedto the organic light-emitting diode OLED, thereby allowing a drivingcurrent Id to flow in the organic light-emitting diode OLED.

A gate electrode of the second initialization thin film transistor T7may be coupled to a third scan line SL+1 of a pixel in a subsequent lineof the corresponding pixel P. Also, one of a source electrode and adrain electrode of the second initialization thin film transistor T7 iscoupled to the emission control thin film transistor T6 and the pixelelectrode of the organic light-emitting diode OLED, and the other of thesource electrode and the drain electrode of the second initializationthin film transistor T7 is coupled to a second initialization voltageline VL2.

Because the first scan line SL and the third scan line SL+1 areelectrically coupled to each other, the same scan line Sn may betransmitted thereto. Therefore, the second initialization thin filmtransistor T7 may be turned on in response to the scan signal Sntransmitted through the third scan line SL+1 and may perform anoperation of initializing the pixel electrode of the organiclight-emitting diode OLED.

In another embodiment, both the first initialization thin filmtransistor T4 and the second initialization thin film transistor T7 maybe coupled to the second scan line SL−1.

One electrode of the storage capacitor Cap is coupled to the drivingvoltage line PL, and an opposite electrode of the organic light-emittingdiode OLED is coupled to a common voltage ELVSS. Accordingly, theorganic light-emitting diode OLED may display an image by emitting lightaccording to the driving current Id transmitted from the driving thinfilm transistor T1.

Referring to FIG. 3, the pixel circuit PC includes seven thin filmtransistors T1 to T7 and one storage capacitor Cap. However, one or moreembodiments are not limited thereto. The number of thin film transistorsand the number of storage capacitors may vary according to a design ofthe pixel circuit PC.

FIG. 4 is a schematic plan view of a portion of the first display areaof the display panel, according to an embodiment.

Referring to FIG. 4, the pixels P are arranged in the first display areaDA1. The pixels P may include red pixels Pr, green pixels Pg, and/orblue pixels Pb. In some embodiments, as shown in FIG. 4, the red pixelsPr, the green pixels Pg, and the blue pixels Pb may be arranged in apen-tile matrix. In other embodiments, the red pixel Pr, the green pixelPg, and the blue pixel Pb may be arranged in stripes.

The red pixel Pr, the green pixel Pg, and the blue pixel Pb may havedifferent sizes (or widths). For example, the size or width of the bluepixel Pb may be greater than those of the red pixel Pr and the greenpixel Pg, and the size or width of the red pixel Pr may be greater thanthat of the green pixel Pg. In some embodiments, a shape of the greenpixel Pg may be a rectangle, and adjacent green pixels Pg may extend indifferent directions, but the present disclosure is not limited thereto.

FIG. 5 is a schematic plan view of a portion of the second display areaof the display panel, according to an embodiment.

Referring to FIG. 5, the pixels P may be arranged in the second displayarea DA2. The pixels P may include red pixels Pr, green pixels Pg,and/or blue pixels Pb. In some embodiments, the red pixels Pr, the greenpixels Pg, and the blue pixels Pb may be arranged in a pen-tile matrix.In other embodiments, the red pixel Pr, the green pixel Pg, and the bluepixel Pb may be arranged in stripes. A structure of each of the redpixel Pr, the green pixel Pg, and the blue pixel Pb may correspond to across-sectional structure described below with reference to FIG. 6.

The second display area DA2 may include the transmittance area TA. Inthe second display area DA2, the transmittance area TA may be adjacentto the pixels P. For example, the transmittance area TA may be betweenthe pixels P. The pixels P arranged in the second display area DA2 mayinclude first pixels P1 and the second pixels P, which are separate fromeach other with the transmittance area TA therebetween For explanation,FIG. 5 shows that two groups of pixels P, which are arranged in an xdirection at the bottom, respectively are the first pixels P1 and thesecond pixels P2. However, two groups of pixels P, which are arranged inthe x direction at the top, may be referred to as the first pixels P andthe second pixels P2, and two groups of pixels P, which are arranged ina y direction with the transmittance area TA therebetween, may bereferred to as the first pixels P and the second pixels P2.

The phase shift layer PSL may be in the second display area DA2 and mayentirely overlap an area where the pixels P are arranged. The phaseshift layer PSL may include the through hole PSL-H corresponding to thetransmittance area TA. In some embodiments, the through hole PSL-H mayroughly have a cross-shape on a plane as shown in FIG. 5, but thepresent disclosure is not limited thereto. For example, in otherembodiments, the shape of the through hole PSL-H may be a circle, anoval, or a polygon such as a rectangle.

FIG. 6 is a schematic cross-sectional view of a portion of the displaypanel, according to an embodiment. The cross-sectional view of FIG. 6corresponds to the cross-section taken along a line VI-VI′ of FIG. 5.

Referring to FIG. 6, the substrate 100 may include a transparentinsulating substrate including a material such as glass and/or quartzand may have a single-layer structure. In other embodiments, thesubstrate 100 may have a multilayered structure including a base layerand an inorganic layer that include a polymer resin.

A buffer layer 111 may be on the substrate 100. The buffer layer 111 maydecrease or block the penetration of foreign materials, moisture, and/orexternal air from the bottom of the substrate 100 and may provide a flatsurface on the substrate 100. The buffer layer 111 may include aninorganic insulating material such as silicon oxide (SiO₂), siliconoxynitride (SiON) and/or silicon nitride (SiN_(x)), and may have asingle-layer structure or a multilayered structure including the abovematerial(s).

On the buffer layer 111, a first pixel circuit PC1 and a second pixelcircuit PC2 may be located. Each of the first pixel circuit PC1 and thesecond pixel circuit PC2 may correspond to the pixel circuit PCdescribed with reference to FIG. 3. The first pixel circuit PC1 and thesecond pixel circuit PC2 may each include the thin film transistor TFTand the storage capacitor Cap and may have the same (e.g., substantiallythe same) structure.

The phase shift layer PSL may be between the substrate 100 and the firstpixel circuit PC1 and the second pixel circuit PC2 in the second displayarea DA2. As shown in FIG. 6, the phase shift layer PSL may be betweenthe substrate 100 and the buffer layer 111. However, the phase shiftlayer PSL may be between sub-substrate layers forming the substrate 100.For example, the substrate 100 may have a stack structure in which afirst base layer including polymer, a first inorganic layer including aninorganic insulating material, a second base layer including polymer,and a second inorganic layer including an inorganic insulating materialare sequentially stacked, and the phase shift layer PSL may be betweenthe aforementioned layers. In other embodiments, the phase shift layerPSL may be between sub-buffer layers forming the buffer layer 111. Onephase shift layer PSL or at least two phase shift layers PSL may be inthe second display area DA2.

Of light passing through the phase shift layer PSL, light in a set orcertain wavelength band may have a phase that is shifted 180 degrees.For example, the phase shift layer PSL may invert, 180 degrees, a phaseof light in a red light band (peak wavelengths are equal to or greaterthan 580 nm and less than 750 nm), a green light band (peak wavelengthsare equal to or greater than 495 nm or less than 580 nm), or a bluelight band (peak wavelengths are equal to or greater than 400 nm or lessthan 495 nm) of light in a visible light band. Hereinafter, theexpression ‘certain wavelength band’, ‘first wavelength band’, or‘second wavelength band’ may indicate one of a red light band, a greenlight band, and a blue light band.

The phase shift layer PSL may have a set or certain light transmittance.For example, the light transmittance of the phase shift layer PSL may bebetween about 3% and about 80%, about 5% and about 80%, about 10% andabout 80%, about 20% and about 80%, about 30% and about 80%, about 40%and about 80%, or about 50% and about 80%. Also, the light transmittanceof the phase shift layer PSL may be between about 5% and about 50%,about 10% and about 50%, about 20% and about 50%, or about 30% and about50%.

The phase shift layer PSL may include at least one selected from thegroup consisting of transition metals, silicon compounds, transitionmetal oxides, transition metal nitrides, transition metal oxynitrides,transition metal carbides, and transition metal oxynitride carbides. Inan embodiment, the phase shift layer PSL may include just a transitionmetal or may include a transition metal and a silicon compound. In otherembodiments, the phase shift layer PSL may include a transition metaland at least one selected from the group consisting of transition metaloxides, transition metal nitrides, transition metal oxynitrides,transition metal carbides, and transition metal oxynitride carbides. Inother embodiments, the phase shift layer PSL may include a transitionmetal, a silicon compound, and at least one selected from the groupconsisting of transition metal oxides, transition metal nitrides,transition metal oxynitrides, transition metal carbides, and transitionmetal oxynitride carbides.

The phase shift layer PSL may have a set or certain thickness t. Forexample, the thickness t may be between about 1000 Å and about 3000 Å,about 1500 Å and about 3000 Å, or about 2000 Å and about 3000 Å. In someembodiments, the thickness t of the phase shift layer PSL may be lessthan or equal to 1000 Å or equal to or greater than 3000 Å.

The phase shift layer PSL may have a set or certain refractive index.For example, the refractive index of the phase shift layer PSL may bebetween about 1.5 and about 4, about 2 and about 4, about 2.5 and about4, or about 3 and about 4. In some embodiments, the refractive index maybe between about 1.5 and about 3.5, about 1.5 and about 3, about 1.5 andabout 2.5, or about 1.5 and about 2. In some embodiments, the refractiveindex may be between about 1.0 and about 1.5 or may be equal to orgreater than 4.

The phase shift layer PSL may have a set or certain extinctioncoefficient. For example, the extinction coefficient may be betweenabout 0.01 and about 2, about 0.1 and about 2, about 0.5 and about 2, orabout 1 and about 2. For example, the extinction coefficient may bebetween about 0.01 and about 1, about 0.01 and about 0.5, or about 0.01and about 0.1.

A wavelength band, in which the phase shift layer PSL inverts a phase oftransmitted light 180 degrees, may depend on the thickness t, therefractive index, the material, and the composition ratio of the phaseshift layer PSL.

The thin film transistor TFT may include a semiconductor layer Act1, agate electrode GE1 overlapping a channel area of the semiconductor layerAct1, and a source electrode SE1 and a drain electrode DE1 respectivelycoupled to a source area and a drain electrode of the semiconductorlayer Act1. A first gate insulating layer 112 may be between thesemiconductor layer Act1 and the gate electrode GE1, and a second gateinsulating layer 113 and an interlayer insulating layer 115 may bebetween the gate electrode GE1 and the source electrode SE1 or betweenthe gate electrode GE1 and the drain electrode DE1.

The storage capacitor Cap may overlap the thin film transistor TFT. Thestorage capacitor Cap may include a first charging plate CE1 and asecond charging plate CE2 that overlap each other. In some embodiments,the gate electrode GE1 of the thin film transistor TFT may include thefirst charging plate CE1 of the storage capacitor Cap. The second gateinsulating layer 113 may be between the first charging plate CE1 and thesecond charging plate CE2.

The semiconductor layer Act1 may include polysilicon. In someembodiments, the semiconductor layer Act1 may include amorphous silicon.In some embodiments, the semiconductor layer Act1 may include at leastone oxide selected from the group consisting of indium (In), gallium(Ga), tin or stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf),cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc(Zn). The semiconductor layer Act1 may include the source and drainareas doped with impurities and a channel area.

The first gate insulating layer 112 may include an inorganic insulatingmaterial including SiO₂, SiON, and/or SiN_(x), and may have asingle-layer structure or a multilayered structure including the abovematerial(s).

The gate electrode GE1 or the first charging plate CE1 may include alow-resistance conductive material such as Mo, Al, Cu, and/or Ti, andmay have a single-layer structure or a multilayered structure includingthe above material(s).

The second gate insulating layer 113 may include an inorganic insulatingmaterial such as SiO₂, SiON, and/or SiN_(x), and may have a single-layerstructure or a multilayered structure including the above material(s).

The second charging plate CE2 may include Al, platinum (Pt), palladium(Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium(Nd), iridium (Ir), Cr, lithium (Li), calcium (Ca), molybdenum (Mo),titanium (Ti), tungsten (W), and/or copper (Cu), and may have asingle-layer structure or a multilayered structure including the abovematerial(s).

The interlayer insulating layer 115 may include an inorganic insulatingmaterial such as SiO₂, SiON, and/or SiN_(x), and may have a single-layerstructure or a multilayered structure including the above material(s).

The source electrode SE1 or the drain electrode DE1 may each include Al,Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ni, Ca, Mo, Ti, W, and/or Cu, andmay have a single-layer structure or a multilayered structure includingthe above material(s). For example, the source electrode SE1 or thedrain electrode DE1 may have a tri-layer structure of Ti/Al/Ti.

The aforementioned pixel circuit PC including the thin film transistorTFT and the storage capacitor Cap may be electrically coupled to thepixel electrode 210. As shown in FIG. 5, the pixel circuit PC and thepixel electrode 210 may be electrically coupled to each other by contactmetal CM.

The contact metal CM may be on a first planarization insulating layer117 and may contact the pixel circuit PC through a contact hole formedin the first planarization insulating layer 117. The contact metal CMmay include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ni, Ca, Mo, Ti, W,and/or Cu, and may have a single-layer structure or a multilayeredstructure including the above material(s).

The first planarization insulating layer 117 may include an organicinsulating material. The first planarization insulating layer 117 mayinclude acryl, benzocyclobutene (BCB), polyimide, and/orhexamethyldisiloxane (HMDSO). The organic insulating material of thefirst planarization insulating layer 117 may include a photosensitiveorganic insulating material.

A second planarization insulating layer 118 is on the contact metal CM.The second planarization insulating layer 118 may include an organicinsulating material.

The second planarization insulating layer 118 may include an organicinsulating material such as acryl, BCB, polyimide, and/or HMDSO. Theorganic insulating material of the second planarization insulating layer118 may be a photosensitive organic insulating material.

The pixel electrode 210 may be on the second planarization insulatinglayer 118. The pixel electrode 210 may contact (e.g., physicallycontact) the contact metal CM through a contact hole of the secondplanarization insulating material 118.

The pixel electrode 210 may include a reflective layer including Ag, Mg,Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and/or a compound thereof. The pixelelectrode 210 may include the reflective layer including the abovematerial, and a transparent conductive layer on and/or under thereflective layer. The transparent conductive layer may include indiumtin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide(In₂O₃), indium gallium oxide (IGO), and/or aluminum zinc oxide (AZO).In an embodiment, the pixel electrode 210 may have a tri-layer structurein which an ITO layer, an Ag layer, and an ITO layer are sequentiallystacked.

A pixel-defining layer 119 may be on the pixel electrode 210. Thepixel-defining layer 119 may cover edges of the pixel electrode 210 andmay include an opening 1190P overlapping the center of the pixelelectrode 210.

The pixel-defining layer 119 may prevent or reduce the generation ofarcs, etc. at the edges of the pixel electrode 210 by increasing adistance between the edges of the pixel electrode 210 and the oppositeelectrode 230 above the pixel electrode 210. The pixel-defining layer119 may include an organic insulating material such as polyimide,polyamide, acryl resin, BCB, HMDSO, and/or phenol resin and may beformed by using a spin coating method, etc.

On the pixel-defining layer 119, an intermediate layer 220 is formedcorresponding to the pixel electrode 210. The intermediate layer 220 mayinclude a polymer organic material and/or a low-molecular weightmaterial emitting light of a set or certain color.

The opposite electrode 230 is on the intermediate layer 220. Theopposite electrode 230 may include a conductive material having arelatively low work function. For example, the opposite electrode 230may include a transparent (translucent) layer including Ag, Mg, Al, Ni,Cr, Li, Ca, and/or an alloy thereof. In some embodiments, the oppositeelectrode 230 may further include, on the transparent (translucent)layer including the aforementioned material(s), a layer such as ITO,IZO, ZnO, and/or In₂O₃. In an embodiment, the opposite electrode 230 mayinclude Ag and/or Mg. The opposite electrode 230 may be integrallyformed to entirely cover the first and second display areas (DA1 and DA2of FIG. 1).

The stack structure, in which the pixel electrode 210, the intermediatelayer 220, and the opposite electrode 230 are sequentially stacked, mayform a light-emitting diode, for example, the organic light-emittingdiode OLED. The organic light-emitting diode OLED may emit red light,green light, and/or blue light, and each emission area of the organiclight-emitting diode OLED corresponds to the pixel P. Because theopening 1190P of the pixel-defining layer 119 defines a size and/or awidth of the emission area, a size and/or a width of the pixel P maydepend on a size and/or a width of the opening 1190P of thepixel-defining layer 119 corresponding to the pixel P.

On the opposite electrode 230, a capping layer 250 may be formed. Thecapping layer 250 may include LiF. In some embodiments, the cappinglayer 250 may include an inorganic insulating material such as SiN_(x)and/or an organic insulating material. In some embodiments, the cappinglayer 250 may not be formed.

A thin film encapsulation layer 300 may be on the capping layer 250. Theorganic light-emitting diode OLED may be covered by the thin filmencapsulation layer 300. The thin film encapsulation layer 300 mayinclude the first and second inorganic encapsulation layers 310 and 330and the organic encapsulation layer 320 therebetween.

Each of the first and second inorganic encapsulation layers 310 and 330may include at least one inorganic insulating material. The inorganicinsulating material may include aluminum oxide (Al₂O₃), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), zinc oxide (ZnO₂),silicon oxide (SiO₂), silicon nitride (SiN_(x)), and/or siliconoxynitride (SiON). The first and second inorganic encapsulation layers310 and 330 may be formed by using a chemical vapor deposition method.

The organic encapsulation layer 320 may include a polymer-basedmaterial. The polymer-based material may include acryl-based resin,epoxy-based resin, polyimide, and/or polyethylene. For example, theorganic encapsulation layer 320 may include acryl-based resin, forexample, polymethyl methacrylate, polyacrylic acid, and/or the like. Theorganic encapsulation layer 320 may be formed by hardening a monomer orspreading a polymer.

Each of insulating layers on the substrate 100 may include a hole formedin the transmittance area TA. For example, the first gate insulatinglayer 112, the second gate insulating layer 113, the interlayerinsulating layer 115, the first planarization insulating layer 117, thesecond planarization insulating layer 119, and the pixel-defining layer119 may respectively include first to sixth holes 112H, 113H, 116H,117H, 118H, and 119H located in the transmittance area TA andoverlapping each other. Also, the opposite electrode 230 may include ahole 230H formed in the transmittance area TA. The phase shift layer PSLis not in the transmittance area TA. For example, the phase shift layerPSL may include the through hole PSL-H corresponding to thetransmittance area TA. Thus, the light transmittance of thetransmittance area TA may be improved.

In an embodiment, the display panel 10 may include the first pixelcircuits PC1 and the second pixel circuits PC2 on the substrate, spacedapart from each other with the transmittance area TA therebetween, andeach including a thin film transistor and a storage capacitor. Also, thedisplay panel 10 may include first display elements electrically coupledto the first pixel circuits PC1, respectively, and the second displayelements electrically coupled to the second pixel circuits PC2,respectively, and may also include the phase shift layer PSL between thesubstrate 100 and the first and second pixel circuits PC1 and PC2. Forconvenience, FIG. 6 shows a single second pixel circuit PC2 and a singlesecond display element.

FIG. 7 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment. A structure of the display panelaccording to the present embodiment is the same (e.g., substantially thesame) as the structure described with reference to FIG. 6, andhereinafter a difference therebetween will be mainly described.

The phase shift layer PSL between the substrate 100 and the first andsecond pixel circuits PC1 and PC2 may include sub-phase shift layers.For example, the phase shift layer PSL may include first sub-phase shiftlayers PSL-S1 respectively overlapping the first pixel circuits PC1, andsecond sub-phase shift layers PSL-S2 respectively overlapping the secondpixel circuits PC2. The first sub-phase shift layers PSL-S1 and thesecond sub-phase shift layers PSL-S2 may be spaced apart from each otherand arranged in an isolated form.

FIG. 8 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment. The structure of the displaypanel 10 is the same (e.g., substantially the same) as that describedwith reference to FIG. 6, and hereinafter, a difference therebetweenwill be mainly described.

The light-blocking layer BML may be on the phase shift layer PSL. Thelight-blocking layer BML may include a light-blocking material. Thelight-blocking material may include, for example, metal such as Crand/or Mo, a black ink, dye, and/or the like. The light transmittance ofthe light-blocking layer BML may be less than that of the phase shiftlayer PSL.

The light-blocking layer BML may prevent or reduce diffraction of thelight, which is emitted from the electronic component 20 or directedthereto, through narrow gaps between lines coupled to the pixel circuitPC and prevent or reduce the incidence of the light emitted from theelectronic component 20 from to the pixel circuit PC. Thus, theperformance of the thin film transistor TFT may be improved.

In an embodiment, an edge PSL-E of the phase shift layer PSL may becloser to the transmittance area TA than an edge BML-E of thelight-blocking layer BML, and the edge PSL-E and the edge BML-E may forma step difference. For example, the edge PSL-E of the phase shift layerPSL may be elongated further towards the transmittance area TA by about0.3 μm to about 5 μm, compared to the edge BML-E of the light-blockinglayer BML.

FIG. 9 is a schematic enlarged cross-sectional view of a portion of thedisplay panel of FIG. 8 and corresponds to an area W of FIG. 8. FIG. 10is a schematic plan view of a portion of the second display area of thedisplay panel, according to another embodiment and corresponds to theembodiment of FIG. 9.

Referring to FIG. 9, paths of light beams L1, L2, and L3 among lightbeams that are incident to the display panel are indicated by dashedarrows. Because the first light beam L1 that is incident to thelight-blocking layer BML may not penetrate the light-blocking layer BML,the light beam may not be incident to the electronic component 20 due tothe light-blocking layer BML. The second light beam L2, which isincident to an area of the phase shift layer PSL that does not overlapthe light-blocking layer BML, may partially penetrate the light-blockinglayer BML because the phase shift layer PSL has the set or certain lighttransmittance. However, the second light beam L2 may reach theelectronic component 20 while the phase of the second light beam L2 isinverted 180 degrees in a set or certain wavelength band. The thirdlight beam L3, which does not pass through the phase shift layer PSL inan area close to the edge PSL-E of the phase shift layer PSL, may reachthe electronic component 20 by passing through the buffer layer 111 andthe substrate 100.

Part of the third light beam L3 may be diffracted around the edge of thephase shift layer PSL, and diffracted light L3 d may destructivelyinterfere with the second light beam L2. The distortion (e.g., imagedistortion) by the diffracted light among the light received by theelectronic component 20 may be removed or may decrease, and furthermore,high-quality images may be provided.

In an embodiment, light that is subject to the destructive interferencemay be green light. Among the cone cells of the retinal cells of thehuman eye, the green cone cells have the largest proportion after thered cone cells, and the rod cells absorb green light best in a darkenvironment, so the green light among the visible rays may have thehighest visibility. Therefore, according to an embodiment, an effect ofembodiments of the present disclosure may be improved by using the phaseshift layer PSL for the phase inversion of the green light.

In another embodiment, light that is subject to the destructiveinterference may be red light. A diffraction amount of the red light maybe the greatest because its peak wavelength is the longest. Therefore,according to an embodiment, the effect of embodiments of the disclosuremay be improved by using the phase shift layer PSL for the phaseinversion of the red light.

In another embodiment, light that is subject to the destructiveinterference may be blue light.

Referring to FIG. 10, the phase shift layer PSL and the light-blockinglayer BML are on a plane. Because the edge PSL-E of the phase shiftlayer PSL is closer to the transmittance area TA than the edge BML-E ofthe light-blocking layer BML, an area where the phase shift layer PSL islocated may be greater than an area where the light-blocking layer BMLis located.

FIG. 11 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment, and FIG. 12 is aschematic plan view of a portion of the second display area of thedisplay panel, according to another embodiment.

Referring to FIG. 11, a first phase shift layer PSL1 may be on thesubstrate 100, the light-blocking layer BML may be on the first phaseshift layer PSL1, and a second phase shift layer PSL2 may be on thelight-blocking layer BML. The second phase shift layer PSL2 may overlapthe first phase shift layer PSL1 and the light-blocking layer BML.

In an embodiment, the buffer layer 111 may include sub-buffer layers,for example, a first sub-buffer layer 111 a and a second sub-bufferlayer 111 b. The first sub-buffer layer 111 a may be between the firstphase shift layer PSL1 and the light-blocking layer BML and the secondphase shift layer PSL2, and thus may cover the first phase shift layerPSL1 and the light-blocking layer BML. The second sub-buffer layer 111 bmay be on the second phase shift layer PSL2 and cover the same.

An edge PSL1-E of the first phase shift layer PSL1 may be closer to thetransmittance area TA than the edge BML-E of the light-blocking layerBML. Also, an edge PSL2-E of the second phase shift layer PSL2 may becloser to the transmittance area TA than the edge PSL1-E of the firstphase shift layer PSL1.

Each of the first phase shift layer PSL1 and the second phase shiftlayer PSL2 may shift a phase of light in the visible light band 180degrees. The first phase shift layer PSL1 and the second phase shiftlayer PSL2 may respectively shift phases of light beams in differentwavelength bands. For example, the first phase shift layer PSL1 mayshift a phase of light in a first wavelength band 180 degrees, and thesecond phase shift layer PSL2 may shift a phase of light in a secondwavelength band 180 degrees. Each of the light in the first wavelengthband and the light in the second wavelength band may be one of light inred, green, and blue light band, but may have different peakwavelengths. The light transmittance of the first phase shift layer PSL1may be different from that of the second phase shift layer PSL2.According to embodiments, the light transmittance of the first phaseshift layer PSL1 may be greater than, equal to, or less than the lighttransmittance of the second phase shift layer PSL2.

The first phase shift layer PSL1 and the second phase shift layer PSL2may respectively have a first thickness t1 and a second thickness t2that are different from each other. According to embodiments, athickness of the first phase shift layer PSL1 may be greater than, equalto, or less than a thickness of the second phase shift layer PSL2.

The first phase shift layer PSL1 and the second phase shift layer PSL2may respectively have first and second refractive indices that aredifferent from each other. The first refractive index may be greaterthan, equal to, or less than the second refractive index. The firstphase shift layer PSL1 and the second phase shift layer PSL2 may eachinclude at least one selected from the group consisting of transitionmetals, silicon compounds, transition metal oxides, transition metalnitrides, transition metal oxynitrides, transition metal carbides, andtransition metal oxynitride carbides. A material and/or a compositionratio of the second phase shift layer PSL2 may differ from a materialand/or a composition ratio of the first phase shift layer PSL1. Athickness, a refractive index, a material, and a composition of each ofthe first phase shift layer PSL1 and the second phase shift layer PSL2may be determined by inverting a phase of light in a set or certainwavelength band 180 degrees.

Referring to FIG. 11, paths of light beams L1, L2, L3, and L4 amonglight beams that are incident to the display panel are indicated bydashed arrows. Because the first light beam L1, which is incident to theblock-blocking layer BML, fails to penetrate the block-blocking layerBML, the light beam may not be incident to the electronic component 20due to the light-blocking layer BML. The second light beam L2, which isin the visible light band and incident to an area of the first phaseshift layer PSL1 that does not overlap the light-blocking layer BML, maypass through the first and second phase shift layers PSL1 and PSL2. Alight beam in the first wavelength band of the second light beam L2 inthe visible light band may have a phase that is shifted by the firstphase shift layer PSL1 180 degrees, and a light beam in the secondwavelength band may have a phase that is shifted by the second phaseshift layer PSL2 180 degrees, thereby reaching the electronic component20.

The light beam in the second wavelength band of the third light beam L3in the visible light band, which is incident to an area close to theedge PLS1-E of the first phase shift layer PSL1, may have a phase thatis inverted 180 degrees while passing through the second phase shiftlayer PSL2. Part of the third light beam L3 may be diffracted around theedge of the first phase shift layer PSL1. The diffracted light L3 d maydestructively interfere with a light beam of the second light beam L2,which is in the first wavelength band and of which the phase is inverted180 degrees, and thus the distortion (e.g., image distortion) by thediffracted light of the light received by the electronic component 20may be removed or may decrease.

Part of the fourth light beam L4, which is in the visible light band andincident to an area close to the edge PSL2-E of the second phase shiftlayer PSL2, may be diffracted around the edge of the second phase layerPSL2. Diffracted light L4 d may destructively interfere with the lightof the third light beam L3, which is in the second wavelength band andhas a phase shifted 180 degrees, and thus the distortion (e.g., imagedistortion) by the diffracted light among the light received by theelectronic component 20 may be removed or may decrease.

Referring to FIG. 12, the first and second phase shift layers PSL1 andPSL2 are on the plane. Because the edge PSL2-E of the second phase shiftlayer PSL2 is closer to the transmission area TA than the edge PSL1-E ofthe first phase shift layer PSL1 and the edge BML-E of thelight-blocking layer BML, an area where the second phase shift layerPSL2 is located may be greater than an area where the first phase shiftlayer PSL1 and the light-blocking layer BML are located. Because thesecond phase shift layer PSL2 is at an uppermost layer from among thefirst and second phase shift layers PSL1 and PSL2 and the light-blockinglayer BML, the edge PSL1-E of the first phase shift layer PSL1 and theedge BML-E of the light-blocking layer BML are indicated by dashedlines.

FIG. 13 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment, and FIG. 14 is aschematic plan view of a portion of the second display area of thedisplay panel, according to another embodiment and corresponds to theembodiment of FIG. 13. A structure of the display panel according to thepresent embodiment is the same (e.g., substantially the same) as thestructures described with reference to FIGS. 11 and 12, and a differencetherebetween will be mainly described.

Referring to FIG. 13, the second phase shift layer PSL2 may overlap atleast a portion of each of the first phase shift layer PSL1 and thelight-blocking layer BML, and the second phase shift layer PSL2 mayinclude an opening PSL2-OP overlapping the first phase shift layer PSL1and the light-blocking layer BML. The second phase shift layer PSL2 maycover the edge BML-E of the light-blocking layer BML and the edge PSL1-Eof the first phase shift layer PSL1, and the opening PSL2-OP of thesecond phase shift layer PSL2 may not overlap the edge BML-E of thelight-blocking layer BML and the edge PSL1-E of the first phase shiftlayer PSL1.

Referring to FIG. 14, the first phase shift layer PSL1, the second phaseshift layer PSL2, and the light-blocking layer BML are on the plane. Theedge PSL2-E of the second phase shift layer PSL2 may be closer to thetransmittance area TA than the edge PSL1-E of the first phase shiftlayer PSL1 and the edge BML-E of the light-blocking layer BML. Theopening PSL2-OP of the second phase shift layer PSL2 may correspond toan area where the pixels P are arranged, and an area of the openingPSL2-OP may be smaller than that of the light-blocking layer BML. Theopening PSL2-OP of the second phase shift layer PSL2 may help achievecost-effectiveness compared to a case where the opening PSL2-OP is notincluded.

FIG. 15 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment.

Referring to FIG. 15, the first phase shift layer PSL1 may be on thesubstrate 100, the light-blocking layer BML may be on the first phaseshift layer PSL1, and the second phase shift layer PSL2 may be betweenthe first phase shift layer PSL1 and the light-blocking layer BML.

The edge PSL1-E of the first phase shift layer PSL1 may be closer to thetransmittance area TA than the edge PSL2-E of the second phase shiftlayer PSL2.

Also, the edge PSL2-E of the second phase shift layer PSL2 may be closerto the transmittance area TA than the edge BML-E of the light-blockinglayer BML. The edges PSL1-E, PSL2-E, and BML-E of the first phase shiftlayer PSL1, the second phase shift layer PSL2, and the light-blockinglayer BML may form step differences.

The first phase shift layer PSL1 and the second phase shift layer PSL2may have the first thickness t1 and the second thickness t2 that aredifferent from each other. The first phase shift layer PSL1 and thesecond phase shift layer PSL2 may have the first and second refractiveindices that are different from each other. The first phase shift layerPSL1 and the second phase shift layer PSL2 may each include at least oneselected from the group consisting of transition metals, siliconcompounds, transition metal oxides, transition metal nitrides,transition metal oxynitrides, transition metal carbides, and transitionmetal oxynitride carbides. The material and/or the composition ratio ofthe second phase shift layer PSL2 may differ from the material and/orthe composition ratio of the first phase shift layer PSL1. A thickness,a refractive index, a material, and a composition of each of the firstphase shift layer PSL1 and the second phase shift layer PSL2 may bedetermined to shift a phase of light in a set or certain wavelength band180 degrees.

Referring to FIG. 15, the paths of light beams L1, L2, L3, and L4 amonglight beams that are incident to the display panel are indicated bydashed arrows. Because the first light beam L1 incident to thelight-blocking layer BML fails to pass through the light-blocking layerBML, the light beam may not be incident to the electronic component 20due to the light-blocking layer BML. The second light beam L2, which isincident to the area of the phase shift layer PSL that does not overlapthe light-blocking layer BML, may penetrate the first and second phaseshift layers PSL1 and PSL2 and may reach the electronic component 20while the phase of the second light beam L2 is shifted 180 degrees inthe first and second wavelength bands.

The light beam in the first wavelength band of the third light beam L3,which is incident to the area close to the edge PSL2-E of the secondphase shift layer PSL2, has the phase shifted 180 degrees while passingthrough the first phase shift layer PSL1, and part of the third lightbeam L3 may be diffracted around the edge of the second phase shiftlayer PSL2. The diffracted light L3 d may destructively interfere with alight beam of the second light beam L2, which is in the secondwavelength band and of which the phase is inverted 180 degrees, and thusthe distortion (e.g., image distortion) by the diffracted light of thelight received by the electronic component 20 may be removed or maydecrease.

Part of the fourth light beam L4, which is incident to the area close tothe edge PSL1-E of the first phase shift layer PSL1, may be diffractedaround the edge of the first phase shift layer PSL1. The diffractedlight L4 d may destructively interfere with a light beam of the thirdlight beam L3, which is in the first wavelength band and of which thephase is inverted 180 degrees, and thus the distortion (e.g., imagedistortion) by the diffracted light of the light received by theelectronic component 20 may be removed or may decrease.

FIG. 16 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment. The structure of thedisplay panel of the present embodiment is the same (e.g., substantiallythe same) as that described with reference to FIG. 15, and a differencetherebetween will be mainly described.

Referring to FIG. 16, the edge PSL1-E of the first phase shift layerPSL1 may be closer to the transmittance area TA than the edge BML-E ofthe light-blocking layer BML. The edge PSL2-E of the second phase layerPSL2 may be elongated further towards the transmittance area TA than theedge PSL1-E of the first phase shift layer PSL1. For example, the edgePSL2-E of the second phase shift layer PSL2 may be closer to thetransmittance area TA than the edge PSL1-E of the first phase shiftlayer PSL1, and the second phase layer PSL2 may entirely cover the firstphase shift layer PSL1.

Referring to FIG. 16, the paths of light beams L1, L2, L3, and L4 amongthe light beams that are incident to the display panel are indicated bydashed arrows.

Because the first light L1 that is incident to the light-blocking layerBML may not pass through the light-blocking layer BML, the light may notbe incident to the electronic component 20 due to the light-blockinglayer BML. The second light beam L2, which is incident to the area wherethe first phase shift layer PSL1 and the second phase shift layer PSL2overlap, may have a phase shifted 180 degrees in the first and secondwavelength bands while passing through the first and second phase shiftlayers PSL1 and PSL2, thereby reaching the electronic component 20.

A light beam of the third light beam L3, which is in the secondwavelength band and incident to the area close to the edge PSL1-E of thefirst phase shift layer PSL1, may have a phase shifted 180 degrees whilepassing through the second phase shift layer PSL2, and part of the thirdlight beam L3 may be diffracted around the edge of the first phase shiftlayer PSL1. The diffracted light L3 d may destructively interfere with alight beam of the second light beam L2, which is in the first wavelengthband and of which the phase is inverted 180 degrees, and thus thedistortion (e.g., image distortion) by the diffracted light of the lightreceived by the electronic component 20 may be removed or may decrease.

Part of the fourth light beam L4, which is incident to the area close tothe edge PSL2-E of the second phase shift layer PSL2 may be diffractedaround the edge of the second phase shift layer PSL2. The diffractedlight L4 d may destructively interfere with the light beam of the thirdlight beam L3, which is in the second wavelength band and of which thephase is inverted 180 degrees, and thus the distortion (e.g., imagedistortion) by the diffracted light of the light received by theelectronic component 20 may be removed or may decrease.

FIG. 17 is a schematic enlarged cross-sectional view of a portion of thedisplay panel, according to another embodiment, and FIG. 18 is aschematic plan view of a portion of the second display area of thedisplay panel, according to another embodiment and corresponds to theembodiment of FIG. 17. FIG. 19 shows schematic graphs of amplitudes andintensities of transmitted light according to a location of the displaypanel, according to an embodiment.

Referring to FIGS. 17 and 18, the phase shift layer PSL may be on thesubstrate 100, and the light-blocking layer BML and a light-blockingband layer BML′ may be on the phase shift layer PSL. The light-blockingband layer BML′ may be between the light-blocking layer BML and thetransmittance area TA on a plane and may be spaced apart from thelight-blocking layer BML.

A distance d1 between the light-blocking layer BML and thelight-blocking band layer BML′ may be between about 0.3 μm and about 5μm, between about 0.5 μm and about 5 μm, between about 1 μm and about 5μm, between about 2 μm and about 5 μm, between about 3 μm and about 5μm, or between about 4 μm and about 5 μm. A width d2 of thelight-blocking band layer BML′ may be between about 0.3 μm and about 10μm, between about 0.5 μm and about 10 μm, between about 1 μm and about10 μm, between about 3 μm and about 10 μm, or between about 5 μm andabout 10 μm.

The light-blocking band layer BML′ may include the same (e.g.,substantially the same) light-blocking material as the light-blockinglayer BML. The light transmittance of the light-blocking band layer BML′may be less than that of the phase shift layer PSL. The light-blockingband layer BML′ may include an edge BML′-E heading towards thetransmittance area TA. The edge BML′-E of the light-blocking band layerBML′ may be on the same plane as the edge PSL-E of the phase shift layerPSL.

Referring to FIG. 17, the paths of light beams L1, L2, L3, and L4 amongthe light beams that are incident to the display panel are indicated bydashed arrows.

Because the first light beam L1 and the third light beam L3 that areincident to the light-blocking layer BML and the light-blocking bandlayer BML′ may not pass through the light-blocking layer BML and thelight-blocking band layer BML′, the first light beam L1 and the thirdlight beam L3 may not be incident to the electronic component 20 due tothe light-blocking layer BML and the light-blocking band layer BML′. Thelight beam of the second light beam L2, which is in the set or certainwavelength band and incident to an area between the light-blocking layerBML and the light-blocking band layer BML′ may have the phase shifted180 degrees while passing through the phase shift layer PSL and mayreach the electronic component 20. Part of the fourth light beam L4,which is incident to the area close to the edge PSL-E of the phase shiftlayer PSL, may be diffracted around the edge of the phase shift layerPSL. The diffracted light L4 d may destructively interfere with a lightbeam of the second light beam L2, which is in a set or certainwavelength band and of which the phase is inverted 180 degrees, and thusthe distortion (e.g., image distortion) by the diffracted light of thelight received by the electronic component 20 may be removed or maydecrease.

Referring to FIG. 19, an amplitude and an intensity of the transmittedlight are shown according to the existence of the light-blocking bandlayer BML'. Graphs 1 and 2 correspond to Embodiment 1, and graphs 3 and4 correspond to Embodiment 2. The horizontal axes of graphs 1 to 4indicate corresponding locations according to a width direction (the xdirection of FIG. 1) or a lengthwise direction (the y direction ofFIG. 1) of the substrate. The vertical axes of graphs 1 and 3 indicateamplitudes of transmitted light, and +and − indicate that the phase ofthe transmitted light is shifted 180 degrees. The vertical axes ofgraphs 2 and 4 indicate intensities of transmitted light.

Referring to graphs 1 to 4, a curved line A (indicated by a thin dashedline) indicates a size of an amplitude of light in a set or certainwavelength band which is included in the second light beam (L2,indicated by an arrow of a thin dashed line) that is incident to an areawhere the phase shift layer PSL is not located. A curved line B(indicated by a thick dashed line) indicates an amplitude of light in aset or certain wavelength which is included in the first light beam (L1,indicated by a thick dashed line) and has a phase shifted 180 degrees. Acurved line C indicates a sum of the curved line A and the curved lineB. A curved line D indicates an intensity of the light of thetransmitted light which is in the set or certain wavelength band, andthe intensity may be in proportion to a square of a size of anamplitude.

The first light beam L1 of the transmitted light may have a phaseshifted 180 degrees in a set or certain wavelength band while passingthrough the phase shift layer PSL, and the second light beam L2 of thetransmitted light that does not pass through the phase shift layer PSLmay be incident without a phase shift. The light of the first light beamL1, which is in a set or certain wavelength band and has a phase shifted180 degrees, may be diffracted after passing through the phase shiftlayer PSL and may destructively interfere with the light of the secondlight beam L2 in a set or certain wavelength band in an area close tothe edge PSL-E of the phase shift layer PSL. Referring to the curvedline C of graph 1 and the curved line D of graph 2, the amplitude andintensity of the light in the set or certain wavelength band maydecrease due to the destructive interference in the area close to theedge of the phase shift layer PSL.

Compared with Embodiment 1 in which a light-blocking band portion is notincluded, according to Embodiment 2 in which the light-blocking bandportion is included, a location, where a size of an amplitude of thelight of the first light beam L1 in a set or certain wavelength band andhaving a phase shifted 180 degrees is the greatest (e.g., a locationwhere an absolute value of the amplitude of the curved line B of graph 3is the greatest), may be further from the edge PSL-E of the phase shiftlayer PSL. Therefore, in the area close to the edge PSL-E of the phaseshift layer PSL, a loss of the transmitted light may decrease. Byreducing the loss of the transmitted light, the performance degradationof the electronic component (20 of FIG. 2) may also decrease.

According to Embodiment 2, for example, to achieve a greater destructiveinterference effect by increasing the light transmittance of the phaseshift layer PSL (e.g., equal to or greater than 30%), the loss of thetransmitted light may be reduced in the area close to the edge PSL-E ofthe phase shift layer PSL to thereby decrease the performancedegradation of the electronic component (20 of FIG. 2).

FIG. 20 is a schematic cross-sectional view of a portion of the displaypanel, according to another embodiment. Because a structure of thedisplay panel is the same (e.g., substantially the same) as thatdescribed with reference to FIG. 6, a difference therebetween will bemainly described.

Referring to FIG. 20, a reflection prevention layer 400 may be under thephase shift layer PSL, corresponding to the pixel circuit. Thereflection prevention layer 400 may include chromium oxide, etc. Thereflection prevention layer 400 may have lower reflectivity than thephase shift layer. The reflection prevention layer 400 may prevent orreduce reflection of light, which is incident to the transmittance areaTA, from a surface of the electronic component 20 and is a bad influenceon (e.g., may damage or deteriorate) the thin film transistor TFT, thepixel circuit PC, and/or the like.

According to the one or more embodiments described above, the displayapparatus, of which the display area is expanded for the representationof images in the area where the electronic component is located, and anelectronic apparatus including the display apparatus may be realized.For example, when the electronic component is an electronic component(e.g., a camera) that uses light, the distortion (e.g., imagedistortion) by the diffracted light among the light received by theelectronic component may be removed or may decrease. Furthermore, adisplay panel capable of providing high-quality images and an electronicapparatus including the display panel may be provided. However, thescope of the disclosure is not limited by the above effects.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims, and equivalents thereof.

What is claimed is:
 1. A display panel having a transmittance area andcomprising: a substrate; first pixel circuits and second pixel circuitson the substrate and spaced apart from one another with thetransmittance area therebetween, and each comprising a thin filmtransistor and a storage capacitor; first display elements electricallyrespectively coupled to the first pixel circuits; second displayelements electrically respectively coupled to the second pixel circuits;and a first phase shift layer between the substrate and the first pixelcircuits and the second pixel circuits and having a first lighttransmittance.
 2. The display panel of claim 1, wherein the first phaseshift layer comprises at least one selected from the group consisting oftransition metals, silicon compounds, transition metal oxides,transition metal nitrides, transition metal oxynitrides, transitionmetal carbides, and transition metal oxynitride carbides.
 3. The displaypanel of claim 1, wherein the first light transmittance of the firstphase shift layer in a visible light band is in a range of about 3 andabout
 80. 4. The display panel of claim 1, wherein a first thickness ofthe first phase shift layer has a value in a range of about 1000 Å toabout 3000 521 .
 5. The display panel of claims 1, wherein a firstrefractive index of the first phase shift layer is in a range of about1.5 and about 4.0, and a first extinction coefficient of the first phaseshift layer is in a range of about 0.01 and about 2.0.
 6. The displaypanel of claim 1, wherein the first phase shift layer comprises a firstsub-phase shift layer overlapping the first pixel circuit, and a secondsub-phase shift layer overlapping the second pixel circuit, and thefirst sub-phase shift layer and the second sub-phase shift layer arespaced apart from each other.
 7. The display panel of claim 1, furthercomprising a light-blocking layer on the first phase shift layer,wherein the light-blocking layer has a second light transmittance thatis less than the first light transmittance.
 8. The display panel ofclaim 7, wherein an edge of the first phase shift layer is closer to thetransmittance area than an edge of the light-blocking layer, and theedge of the first phase shift layer and the edge of the light-blockinglayer form a step difference.
 9. The display panel of claim 7, furthercomprising a second phase shift layer on the light-blocking layer andoverlapping the light-blocking layer and the first phase shift layer.10. The display panel of claim 9, wherein an edge of the second phaseshift layer is closer to the transmittance area than the edge of thefirst phase shift layer.
 11. The display panel of claim 7, furthercomprising a second phase shift layer between the first phase shiftlayer and the light-blocking layer.
 12. The display panel of claim 11,wherein the edge of the first phase shift layer is closer to thetransmittance area than an edge of the second phase shift layer.
 13. Thedisplay panel of claim 11, wherein the edge of the second phase shiftlayer is elongated further towards the transmittance area than the edgeof the first phase shift layer.
 14. The display panel of claim 9,wherein each of the first phase shift layer and the second phase shiftlayer comprises at least one selected from the group consisting oftransition metals, silicon compounds, transition metal oxides,transition metal nitrides, transition metal oxynitrides, transitionmetal carbides, and transition metal oxynitride carbides, and a materialor a composition ratio of the second phase shift layer differs from amaterial or a composition ratio of the first phase shift layer.
 15. Thedisplay panel of claim 7, further comprising a light-blocking band layerbetween the light-blocking layer and the transmittance area and spacedapart from the light-blocking layer.
 16. The display panel of claim 1,further comprising a reflection prevention layer under the first phaseshift layer, corresponding to the pixel circuit.
 17. An electronicapparatus comprising: a display panel comprising a transmittance area;and an electronic component overlapping the transmittance area, whereinthe display panel comprises: a substrate; first pixel circuits andsecond pixel circuits on the substrate and spaced apart from each otherwith the transmittance area between the first and second pixel circuits,and each comprising a thin film transistor and a storage capacitor;first display elements electrically respectively coupled to the firstpixel circuits; second display elements electrically respectivelycoupled to the second pixel circuits; and a first phase shift layerbetween the substrate and the first pixel circuits and the second pixelcircuits and having a first light transmittance.
 18. The electronicapparatus of claim 17, further comprising a light-blocking layer on thefirst phase shift layer, wherein an edge of the first phase shift layeris closer to the transmittance area than an edge of the light-blockinglayer, and the edge of the first phase shift layer and the edge of thelight-blocking layer form a step difference.
 19. The electronicapparatus of claim 18, further comprising a second phase shift layer onthe first phase shift layer.
 20. The electronic apparatus of claim 19,wherein each of the first phase shift layer and the second phase shiftlayer comprises at least one selected from the group consisting oftransition metals, silicon compounds, transition metal oxides,transition metal nitrides, transition metal oxynitrides, transitionmetal carbides, and transition metal oxynitride carbides, and a materialor a composition ratio of the second phase shift layer differs from amaterial or a composition ratio of the first phase shift layer.